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| BUZ 357 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 357 VDS 1000 V ID 5.1 A RDS(on) 2 Package TO-218 AA Ordering Code C67078-S3110-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 5.1 Unit A ID IDpuls 20 TC = 25 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 5.1 18 mJ ID = 5.1 A, VDD = 50 V, RGS = 25 L = 62 mH, Tj = 25 C Gate source voltage Power dissipation 850 VGS Ptot 20 125 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 1 75 E 55 / 150 / 56 C K/W 1 01/97 BUZ 357 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 1000 3 10 10 1.7 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 1000 V, VGS = 0 V, Tj = 25 C VDS = 800 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 2 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 3.2 A Semiconductor Group 2 01/97 BUZ 357 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 2.5 5.2 1700 170 80 - S pF 2200 300 120 ns 30 45 VDS 2 * ID * RDS(on)max, ID = 3.2 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Rise time tr 100 160 VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Turn-off delay time td(off) 400 520 VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Fall time tf 130 170 VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Semiconductor Group 3 01/97 BUZ 357 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1 1.5 6.5 5.1 20 V 1.2 s C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 10 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 01/97 BUZ 357 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 5.5 A 130 W 110 Ptot 100 90 80 70 60 50 40 30 ID 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 20 10 0 0 20 40 60 80 100 120 C 160 0.5 0.0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A ID 10 1 t = 21.0s p ZthJC 10 0 100 s /I 10 -1 D = 0.50 1 ms =V DS D 0.20 0.10 10 ms 10 0 R DS (on ) 10 -2 0.05 0.02 0.01 single pulse 10 -1 10 0 10 1 10 2 DC 3 V 10 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 01/97 BUZ 357 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 12 A 10 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 6.5 Ptot = 125W l kj i hg f e VGS [V] a b c 5.5 ID d a b c 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 9 8 7 6 5 4 3 2 a b c RDS (on) 5.0 4.5 4.0 3.5 3.0 d d e f g h i j k l 2.5 2.0 1.5 1.0 0.5 0.0 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 e f g h i j k 1 0 0 10 20 30 40 V 60 h i j k 8.0 9.0 10.0 20.0 0 2 4 6 8 A 11 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 6.0 A 5.0 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 7.0 S 6.0 ID 4.5 4.0 3.5 3.0 2.5 2.0 1.5 gfs 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 V VGS 10 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A ID 4.0 Semiconductor Group 6 01/97 BUZ 357 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 3.2 A, VGS = 10 V 10 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 RDS (on) 8 7 6 5 4 3 2 1 0 -60 98% VGS(th) 3.6 3.2 2.8 2.4 2.0 typ 2% 98% typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 nF C A Ciss 10 0 IF 10 1 Coss 10 -1 10 0 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 01/97 BUZ 357 Avalanche energy EAS = (Tj ) parameter: ID = 5.1 A, VDD = 50 V RGS = 25 , L = 62 mH 900 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 8 A 16 V EAS 700 600 VGS 12 10 500 8 400 6 300 200 100 0 20 4 0,2 VDS max 0,8 VDS max 2 0 40 60 80 100 120 C 160 0 20 40 60 80 100 120 140 160 nC 200 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 1200 V 1160 V(BR)DSS 1140 1120 1100 1080 1060 1040 1020 1000 980 960 940 920 900 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 01/97 |
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